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AP01L60H/J Pb Free Plating Product Advanced Power Electronics Corp. Repetitive Avalanche Rated Fast Switching Speed Simple Drive Requirement RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 12 1A Description The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01L60J) is available for low-profile applications. G D S TO-252(H) G DS TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 600 30 1 0.8 3 29 0.232 2 Units V V A A A W W/ mJ A mJ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 0.5 1 0.5 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.3 110 Units /W /W Data & specifications subject to change without notice 200629052-1/4 AP01L60H/J Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS BVDSS/Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 600 2 Typ. 0.8 0.8 4.0 1.0 1.1 6.6 5.0 11.7 9.2 170 30.7 5.1 Max. Units 12 4 10 100 100 V V/ V S uA uA nA nC nC nC ns ns ns ns pF pF pF o Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VGS=10V, ID=0.5A VDS=VGS, ID=250uA VDS=10V, ID=0.5A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=30V ID=1A VDS=480V VGS=10V VDD=300V ID=1A RG=3.3,VGS=10V RD=300 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.2V 1 Min. - Typ. - Max. Units 1 5 1.2 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 3 Tj=25, IS=1A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=1.0mH , RG=25 , IAS=1.0A. 3.Pulse width <300us , duty cycle <2%. 2/4 AP01L60H/J 1.5 1.0 T C =25 C ID , Drain Current (A) o 1.0 ID , Drain Current (A) 10V 6.0V 5.5V 5.0V T C =150 C 0.8 o 10V 5.0V 4.5V 0.5 0.5 V G =4.5V 0.3 V G =4.0V 0.0 0 12 24 36 0.0 0 10 20 30 40 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 3 I D =0.5A V G =10V Normalized BVDSS (V) 1.1 Normalized RDS(ON) 2 1 1 0.9 0 -50 0 50 100 150 -50 0 50 100 150 T j , Junction Temperature ( o C) T j , Junction Temperature ( o C ) Fig 3. Normalized BVDSS v.s. Junction Temperature 10 3.5 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 3.0 T j = 150 o C T j = 25 o C VGS(th) (V) 2.5 2.0 1.6 -50 IS (A) 0.1 0.01 0 0.4 0.8 1.2 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C ) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP01L60H/J 16 1000 f=1.0MHz VGS , Gate to Source Voltage (V) 12 I D =1A V DS =480V 100 C iss C (pF) 8 C oss 10 4 C rss 0 0 1.5 3 4.5 6 1 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 0.2 1 10us ID (A) 0.1 0.1 0.05 100us 0.1 0.02 PDM 1ms 0.01 t T T c =25 C Single Pulse 0.01 1 10 100 o Single Pulse 10ms 100ms 1000 10000 Duty Factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 |
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